polycide

and we found the Salicide process compatible the Silicide and Polycide process in the advanced process.

在更进步的工艺中把Silicide 与 Polycide 一起，发展出所谓Salicide 工艺。

Edge effects of Ni polycide formation are enhanced by such recessed spacer and result in Rs reduction further.

藉由凹陷式间隙壁，多晶矽化金属的边际效应被强，导致于片电阻值被进一步的减少。