In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和积体电路的材料上。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和积体电路的材料上。
2000年,我便从奈米这种白色羊毛状的金属氧化物(像在900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.
2000年,我便从奈米这种白色羊毛状的金属氧化物(像在900~1200℃的烘烤环境下与氩气作用)和奈米线开始著手。
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