An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件的闭效应入手,提出了抑制闭的一种新方法—伪闭路径法。
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件的闭效应入手,提出了抑制闭的一种新方法—伪闭路径法。
The design procedure of a radiation sensitive switch for prevention of latchup is described in detail.
介绍了一种用抗闭的辐射敏感开关。
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