The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm绿峰发光衰变规律显示绿光要源于导带至OZn反位缺陷迁。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm绿峰发光衰变规律显示绿光要源于导带至OZn反位缺陷迁。
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