Note that the oxide layer under the photoresist is protected.

请注意，下方的氧层受到保护。

To clean up, we use yet another special chemical that washes away any remaining photoresist.

为了清理，我们使用了另一种特殊的学物质来洗掉所有残留的。

Where the mask blocks the light, the photoresist is unchanged.

在掩模阻挡的地方，没有。

Once again, we wash away remaining photoresist.

我们再次洗掉剩余的。

Once more, we apply a photoresist, and use a new photomask to etch little channels.

再一次，我们应用，并使用新的掩模来蚀小通道。

The process essentially starts again, first by building up a fresh oxide layer ...which we coat in photoresist.

这个过程基本上又开始了，首先是建立一个新的氧层… … 我们在上面涂上。

So, very similar to before, we apply a photoresist, use a photomask, dissolve the exposed resist, and use a chemical to remove any exposed metal.

因此，与之前非常相似， 我们应用， 使用掩模， 溶解暴露的抗蚀剂，并使用学物质去除任何暴露的金属。

But where the light does hit the photoresist it changes chemically which lets us wash away only the photoresist that was exposed to light, selectively revealing areas of our oxide layer.

但是，在确实照射到的地方，它会发生学，这让我们只能洗掉暴露在下的，有选择地露出氧层的区域。