1.Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

1.重点研究了化PMOS器件高场火效应和氧化层制。

2.The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.

2.通过热释极化温度扫描法分离出对解俘获流峰贡献各局域能级峰。