Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

重了化PMOS器件的高场火效应和氧化层陷阱子的陷阱机制。

The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.

通过热释极化温度扫描法分离出对解流峰贡献的各局域能级峰。