The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.

用X射线衍射末样品的结构进行了观,磁导率减落量用计算机辅助系统的阻抗自动量(LCR)来完成。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容阻计量(HP4284A)进行C-V曲线量；以微安培计量(HP4140B)进行J-V曲线量。